PART |
Description |
Maker |
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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A63L7332 A63L7332E-42 A63L7332E-45 A63L7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 4.2ns 128K x 32bit synchronous high speed SRAM 4.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology Corporation
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IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM From old datasheet system ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM 55ns; 5V; 128K x 8 high-speed CMOS static RAM
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Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
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W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM)的
|
Winbond Electronics, Corp.
|
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
|
Sony, Corp.
|
A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM 9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32 From old datasheet system 128*8HIGH SPEED COMOS STATIC RAM
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
IS63LV1024 IS63LV1024-10TI IS63LV1024-10T IS63LV10 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 15 ns, PDSO32
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Integrated Silicon Solu... ISSI[Integrated Silicon Solution Inc] ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc EPCOS AG
|
CY27H010-25JC CY27H010-25ZC CY27H010-30JC CY27H010 |
128K x 8 High-Speed CMOS EPROM
|
Cypress Semiconductor
|